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| NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector-Emitter Voltage: VCEX = 1500V D Glassivated Base-Collector Junction D Safe Operating Area @ 50s = 20A, 400V D Switching Times with Inductive Loads: tf = 0.4s (Typ) @ IC = 4.5A Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V Collector-Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A Total Power Dissipation, PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25C/W Maximum Lead Temperature (During Soldering, 1/8" from Case for 5sec), TL . . . . . . . . . . . +275C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics (Note 1) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) IC = 4.5A, IB = 1.8A IC = 3.5A, IB = 1.5A Base-Emitter Saturation Voltage IC = 4.5A, IB = 1.8A IC = 3.5A, IB = 1.5A Dynamic Characteristics Current Gain - Bandwidth Product Output Capacitance Switching Characteristics Fall Time tf IC = 4.5A, IB1 = 1.8A, LB = 8H IC = 4.5A, IB1 = 1.8A, LB = 8H, TC = +100C - - 0.4 0.6 1.0 - s s fT Cob IC = 100mA, VCE = 5V, ftest = 1MHz VCB = 10V, IE = 0, f = 0.1MHz - - 4 125 - - MHz pF - - - - - - - - 5 5 1.5 1.5 V V V V VCEO(sus) IC = 50mA, IB = 0 ICES IEBO VCE = 1500V, VBE = 0 VBE = 5V, IC = 0 750 - - - - - - 1 1 V mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle = 2%. .600 (15.24) .060 (1.52) .173 (4.4) C .156 (3.96) Dia. B C E .550 (13.97) .430 (10.92) .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners |
Price & Availability of NTE2301
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